BSZ036NE2LSATMA1 vs BSZ150N10LS3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ036NE2LSATMA1 sa pamamagitan ng Infineon at BSZ150N10LS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ036NE2LSATMA1 BSZ150N10LS3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 100 V
Continuous Drain Current (ID) at TA=25C 16 A —
Continuous Drain Current (ID) at TC=25C 40 A —
Power Dissipation (PD) at TA=25C 2.1 W —
Power Dissipation (PD) at TC=25C 37 W —
Packhaging PG-TSDSON-8-FL (5x6 mm) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single —
Hanay ng Temperature na Operasyon -55C to +150C —
Level ng MSL 1 (Unlimited) [DATA_NEEDED: MSL moisture sensitivity level]
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Gate Drive Logic-level compatible —
Part Number — BSZ150N10LS3GATMA1
Technology / Family — OptiMOS 3
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25 °C) — 40 A
On-Resistance RDS(on) max — 15 mΩ
Power Dissipation (TA=25 °C) — 2.1 W
Pwersang Pinahihigpit (TC=25°C) — 63 W
Operating Temperature Range (TJ) — -55 °C to +150 °C
Gate Threshold VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Lead-Free / Reflow — Yes (lead-free, 260 °C peak reflow compatible)

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