BSZ0501NSIATMA1 vs BSZ0994NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ0501NSIATMA1 sa pamamagitan ng Infineon at BSZ0994NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSZ0501NSIATMA1 BSZ0994NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0501NSIATMA1 —
Product Family OptiMOS 5 (25V/30V) —
FET Type N-Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
Packhaging PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TSDSON-8-25 (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
Level ng MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj max] -55C to +150C (junction)
Tindminan RoHS Compliant Compliant
Series — OptiMOS 5 30V
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID, Ta) — 13 A
Power Dissipation (PD, Ta) — 2.1 W
Technology — Trench (OptiMOS 5)
Bilang ng Pins — 8
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) typ]
On-Resistance (RDS(on), typ @10V) — [DATA_NEEDED: RDS(on) typ @VGS=10V]
Gate Charge (Qg, typ) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel

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