BSZ0501NSIATMA1 vs BSZ0994NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ0501NSIATMA1 disebabkan oleh Infineon dan BSZ0994NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ0501NSIATMA1 BSZ0994NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0501NSIATMA1 —
Product Family OptiMOS 5 (25V/30V) —
FET Type N-Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
Kemasan PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TSDSON-8-25 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Gambaran Suhu Operasi [DATA_NEEDED: Tj max] -55C to +150C (junction)
Status RoHS Compliant Compliant
Series — OptiMOS 5 30V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID, Ta) — 13 A
Power Dissipation (PD, Ta) — 2.1 W
Technology — Trench (OptiMOS 5)
Bilangan Pin — 8
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) typ]
On-Resistance (RDS(on), typ @10V) — [DATA_NEEDED: RDS(on) typ @VGS=10V]
Gate Charge (Qg, typ) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel

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