BSZ0501NSIATMA1 vs BSZ0994NSATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0501NSIATMA1 dari Infineon dan BSZ0994NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0501NSIATMA1 BSZ0994NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0501NSIATMA1 —
Product Family OptiMOS 5 (25V/30V) —
FET Type N-Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
Paket PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TSDSON-8-25 (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Rentang Suhu Kerja [DATA_NEEDED: Tj max] -55C to +150C (junction)
Status RoHS Compliant Compliant
Series — OptiMOS 5 30V
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID, Ta) — 13 A
Power Dissipation (PD, Ta) — 2.1 W
Technology — Trench (OptiMOS 5)
Jumlah Pin — 8
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) typ]
On-Resistance (RDS(on), typ @10V) — [DATA_NEEDED: RDS(on) typ @VGS=10V]
Gate Charge (Qg, typ) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon