BSZ065N03LSATMA1 vs BSZ096N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ065N03LSATMA1 by Infineon and BSZ096N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ065N03LSATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 12 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| Power Dissipation (PD) at TA=25C | 2.1 W | β |
| Power Dissipation (PD) at TC=25C | 26 W | β |
| Package / Case | PG-TSDSON-8-FL (S308) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | β |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS 5 trench MOSFET |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C (junction) |
| MSL Level | 1 | β |
| RoHS Status | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | β |
| Product Family | β | OptiMOS 5 |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 100 V |
| Gate-Source Voltage (VGS max) | β | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 Β°C) | β | 40 A |
| Maximum Silicon Drain Current (ID max) | β | 62 A |
| Pulse Drain Current (ID,pulse) | β | 160 A |
| On-Resistance RDS(on) max | β | 9.6 mΞ© at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 Β°C) | β | 69 W |
| Gate Threshold Voltage VGS(th) | β | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | β | 40 A (TC=25 Β°C) |
| Diode Forward Voltage (VSD) | β | 0.85 V typ, 1.2 V max at IF=20 A |
| Package | β | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Gate Drive | β | Logic-level compatible |
| ESD Protection | β | Yes (gate-integrated) |
| Packaging Code | β | ATMA1 (tape and reel) |