BSZ065N06LS5ATMA1 vs BSZ011NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of BSZ065N06LS5ATMA1 by Infineon and BSZ011NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ065N06LS5ATMA1

BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 ✓ Active
Infineon
BSZ011NE2LS5IATMA1

BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 ✓ Active

Specification Comparison

Parameter BSZ065N06LS5ATMA1 BSZ011NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.55
Manufacturer Infineon Technologies
Series OptiMOS™ 5
Transistor Type N-Channel MOSFET
Technology OptiMOS™ 5 logic-level OptiMOS 5 (Trench)
Drain-Source Voltage (VDS) Max 60 V
Continuous Drain Current (ID) Max 65 A
Drain Current @ Tc (ID, Tc=25°C) 40 A
On-Resistance RDS(on) Max @ VGS=10V 6.5 mΩ
Power Dissipation (PD) Max 46 W
Gate Threshold Voltage (VGS(th)) 2.3 V
Total Gate Charge (Qg) 13 nC @ VGS=4.5 V
Input Capacitance (Ciss) 1.8 nF
Operating Temperature Range -55°C to +150°C -55°C to +150°C
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
FET Type N-Channel
Drain-Source Voltage (VDS) 25 V
Continuous Drain Current (ID) at TA=25°C 35 A
Continuous Drain Current (ID) at TC=25°C 40 A
On-State Resistance RDS(on) max at VGS=10 V 1.1 mΩ (typical, per datasheet title)
Power Dissipation at TA=25°C 2.1 W
Power Dissipation at TC=25°C 69 W
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (typical 1.5 V)
Gate Drive Voltage (recommended) 4.5 V to 10 V
MSL Level MSL1 (per JEDEC J-STD-020)
Lead-Free Yes
Halogen-Free Yes

Datasheets & Resources

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