BSZ065N06LS5ATMA1 vs BSZ011NE2LS5IATMA1 Perbandingan
Perbandingan bersamaan detil BSZ065N06LS5ATMA1 dari Infineon dan BSZ011NE2LS5IATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ065N06LS5ATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 logic-level | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) Max | 65 A | — |
| Drain Current @ Tc (ID, Tc=25°C) | 40 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ | — |
| Power Dissipation (PD) Max | 46 W | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=4.5 V | — |
| Input Capacitance (Ciss) | 1.8 nF | — |
| Rentang Suhu Kerja | -55°C to +150°C | -55°C to +150°C |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25°C | — | 35 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | — | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | — | 4.5 V to 10 V |
| Level MSL | — | MSL1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |