BSZ0909NSATMA1 vs BSZ0901NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ0909NSATMA1 disebabkan oleh Infineon dan BSZ0901NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ0909NSATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 25V OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) 34 V 30 V
Continuous Drain Current (ID) at TA=25C 9 A —
Continuous Drain Current (ID) at TC=25C 36 A —
R-DS(on) Max at VGS=10V 12 mOhm at ID=20A —
Gate-Source Threshold Voltage (VGS(th)) 2 V at ID=250 uA —
Total Gate Charge (Qg) 17 nC at VGS=10V [DATA_NEEDED: total gate charge Qg]
Input Capacitance (Ciss) 1.31 nF at VDS=15V —
Power Dissipation (PD) at TA=25C 2.1 W —
Power Dissipation (PD) at TC=25C 25 W —
Suhu Hubungan Operasi -55C to +150C —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan PG-TSDSON-8 (8-PowerTDFN) 3.3x3.3 mm PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Kiraan Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Gambaran Suhu Operasi — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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