BSZ110N08NS5ATMA1 vs BSZ096N10LS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSZ110N08NS5ATMA1 dari Infineon dan BSZ096N10LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ110N08NS5ATMA1 BSZ096N10LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 —
Technology OptiMOS 5 N-Channel Power MOSFET OptiMOS 5 trench MOSFET
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Tc 40 A —
On-Resistance RDS(on) max 11 mΩ 9.6 mΩ at VGS=10 V
Power Dissipation (PD) at Tc 50 W —
Paket PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Polarity N-Channel N-Channel
Configuration Single MOSFET —
Gate Drive Voltage (VGS) [DATA_NEEDED: VGS rating] —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55 °C to +150 °C (junction)
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] —
Product Family — OptiMOS 5
Drain-Source Voltage (VDS max) — 100 V
Gate-Source Voltage (VGS max) — 20 V (typical)
Continuous Drain Current (ID, TC=25 °C) — 40 A
Maximum Silicon Drain Current (ID max) — 62 A
Pulse Drain Current (ID,pulse) — 160 A
Total Power Dissipation (Ptot, TC=25 °C) — 69 W
Gate Threshold Voltage VGS(th) — Logic-level (low single-volt range)
Diode Continuous Forward Current (IS) — 40 A (TC=25 °C)
Diode Forward Voltage (VSD) — 0.85 V typ, 1.2 V max at IF=20 A
Gate Drive — Logic-level compatible
ESD Protection — Yes (gate-integrated)
Packaging Code — ATMA1 (tape and reel)

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