BSZ110N08NS5ATMA1 vs BSZ096N10LS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ110N08NS5ATMA1 disebabkan oleh Infineon dan BSZ096N10LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSZ110N08NS5ATMA1 BSZ096N10LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 —
Technology OptiMOS 5 N-Channel Power MOSFET OptiMOS 5 trench MOSFET
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Tc 40 A —
On-Resistance RDS(on) max 11 mΩ 9.6 mΩ at VGS=10 V
Power Dissipation (PD) at Tc 50 W —
Kemasan PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Polarity N-Channel N-Channel
Configuration Single MOSFET —
Gate Drive Voltage (VGS) [DATA_NEEDED: VGS rating] —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55 °C to +150 °C (junction)
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] —
Product Family — OptiMOS 5
Drain-Source Voltage (VDS max) — 100 V
Gate-Source Voltage (VGS max) — 20 V (typical)
Continuous Drain Current (ID, TC=25 °C) — 40 A
Maximum Silicon Drain Current (ID max) — 62 A
Pulse Drain Current (ID,pulse) — 160 A
Total Power Dissipation (Ptot, TC=25 °C) — 69 W
Gate Threshold Voltage VGS(th) — Logic-level (low single-volt range)
Diode Continuous Forward Current (IS) — 40 A (TC=25 °C)
Diode Forward Voltage (VSD) — 0.85 V typ, 1.2 V max at IF=20 A
Gate Drive — Logic-level compatible
ESD Protection — Yes (gate-integrated)
Packaging Code — ATMA1 (tape and reel)

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