BSZ110N08NS5ATMA1 vs IAUCN04S7N009ATMA1 Comparison
Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and IAUCN04S7N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSZ110N08NS5ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.44 | $1.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | β |
| Technology | OptiMOS 5 N-Channel Power MOSFET | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Tc | 40 A | β |
| On-Resistance RDS(on) max | 11 mΞ© | β |
| Power Dissipation (PD) at Tc | 50 W | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | β |
| Configuration | Single MOSFET | Single N-Channel |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Series | β | OptiMOS 7 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 175 A |
| R_DS(on) Max @ V_GS = 10 V | β | 0.96 mΞ© |
| Gate Drive Voltage (V_GS) | β | 10 V |
| Operating Temperature | β | -55C to +175C |
| Qualification | β | AEC-Q101 (Automotive) |
| Supplier Device Package | β | PG-TDSON-8-34 |