BSZ110N08NS5ATMA1 vs IAUCN04S7N009ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ110N08NS5ATMA1 sa pamamagitan ng Infineon at IAUCN04S7N009ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSZ110N08NS5ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8-34 (Surface Mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | Single N-Channel |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| Temperature na Operasyon | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| Supplier Device Package | — | PG-TDSON-8-34 |