BSZ215CHXTMA1 vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ215CHXTMA1 dari Infineon dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ215CHXTMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS OptiMOS 25V
FET Type N-Channel and P-Channel Complementary N-Channel
Drain-Source Voltage (Vds) 20 V —
Continuous Drain Current - N-channel (Id) 5.1 A —
Continuous Drain Current - P-channel (Id) 3.2 A —
Power Dissipation (Pd) 2.5 W —
On-State Resistance - N-channel max (Rds(on)) [DATA_NEEDED: N-channel Rds(on)] —
On-State Resistance - P-channel max (Rds(on)) [DATA_NEEDED: P-channel Rds(on)] —
Technology OptiMOS (enhancement mode) OptiMOS trench N-channel MOSFET
Paket PG-TSDSON-8 (PQFN 3.3 x 3.3) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C -55 C to +150 C (typical MOSFET range)
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Lead-Free Yes (100% lead-free) —
Avalanche Rated Yes —
Part Number — BSZ0901NSIATMA1
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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