BSZ215CHXTMA1 vs BSZ0901NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ215CHXTMA1 disebabkan oleh Infineon dan BSZ0901NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ215CHXTMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS OptiMOS 25V
FET Type N-Channel and P-Channel Complementary N-Channel
Drain-Source Voltage (Vds) 20 V —
Continuous Drain Current - N-channel (Id) 5.1 A —
Continuous Drain Current - P-channel (Id) 3.2 A —
Power Dissipation (Pd) 2.5 W —
On-State Resistance - N-channel max (Rds(on)) [DATA_NEEDED: N-channel Rds(on)] —
On-State Resistance - P-channel max (Rds(on)) [DATA_NEEDED: P-channel Rds(on)] —
Technology OptiMOS (enhancement mode) OptiMOS trench N-channel MOSFET
Kemasan PG-TSDSON-8 (PQFN 3.3 x 3.3) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C -55 C to +150 C (typical MOSFET range)
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Lead-Free Yes (100% lead-free) —
Avalanche Rated Yes —
Part Number — BSZ0901NSIATMA1
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Kiraan Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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