CSD19534Q5A vs BSC520N15NS3 Comparison
Detailed side-by-side comparison of CSD19534Q5A by Texas Instruments and BSC520N15NS3 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ Active
Specification Comparison
| Parameter | CSD19534Q5A | BSC520N15NS3 |
|---|---|---|
| Brand | Texas Instruments | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.71 |
| FET Type | N-Channel | — |
| Technology | NexFET (Power MOSFET) | OptiMOS 3, N-channel trench MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| On-Resistance RDS(on) | 12.6 mΩ (typ per datasheet description) | — |
| Power Dissipation (Ta) | 3.2 W | — |
| Power Dissipation (Tc) | 63 W | — |
| Package | 8-VSONP (5x6 mm) with exposed pad | PG-TDSON-8-5 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| MSL Level | 1-260C-UNLIM | 1 |
| RoHS Status | Compliant | Compliant |
| Pin Count | 8 | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, TC=25C) | — | 21 A |
| Pulsed Drain Current (IDM) | — | 84 A |
| On-State Resistance RDS(on) max (VGS=10V) | — | 52 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Gate Threshold Voltage VGS(th) typ | — | 3 V |
| Power Dissipation (TC=25C) | — | 57 W |
| Operating Junction Temperature | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Body Diode | — | Intrinsic, avalanche-rated |