CSD19534Q5A vs BSC520N15NS3 Vergleich
Detaillierter Direktvergleich von CSD19534Q5A von Texas Instruments und BSC520N15NS3 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ Aktiv
Spezifikationsvergleich
| Parameter | CSD19534Q5A | BSC520N15NS3 |
|---|---|---|
| Marke | Texas Instruments | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,71 |
| FET Type | N-Channel | — |
| Technology | NexFET (Power MOSFET) | OptiMOS 3, N-channel trench MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| On-Resistance RDS(on) | 12.6 mΩ (typ per datasheet description) | — |
| Power Dissipation (Ta) | 3.2 W | — |
| Power Dissipation (Tc) | 63 W | — |
| Gehäuse | 8-VSONP (5x6 mm) with exposed pad | PG-TDSON-8-5 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| MSL-Level | 1-260C-UNLIM | 1 |
| RoHS-Status | Compliant | Compliant |
| Pin-Anzahl | 8 | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, TC=25C) | — | 21 A |
| Pulsed Drain Current (IDM) | — | 84 A |
| On-State Resistance RDS(on) max (VGS=10V) | — | 52 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Gate Threshold Voltage VGS(th) typ | — | 3 V |
| Power Dissipation (TC=25C) | — | 57 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Body Diode | — | Intrinsic, avalanche-rated |