FODM217AR2 vs FODM217A Comparison

Detailed side-by-side comparison of FODM217AR2 by onsemi and FODM217A by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter FODM217AR2 FODM217A
Brand onsemi onsemi
Category Optocouplers Optocouplers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.21 $0.31
Part Number FODM217AR2 —
Manufacturer onsemi (ON Semiconductor) —
Device Type Single-Channel DC-Sensing Phototransistor Optocoupler —
Output Configuration Transistor (phototransistor, single channel) —
Number of Channels 1 —
Input Type DC sensing DC Sensing
Package 4-SOP / MFP-4 (half-pitch mini-flat, 1.27 mm pitch) 4-SOP (Half-Pitch Mini-Flat)
Isolation Voltage (VISO) 3750 Vrms (per UL 1577) 3,750 VACrms
Collector-Emitter Voltage (Vceo) 80 V maximum —
Collector Current (Ic) 50 mA maximum —
Forward Current (IF) 50 mA maximum —
Forward Voltage (VF) 1.2 V typical at IF=10 mA —
VCE(SAT) 0.4 V maximum at IC=2.4 mA, IF=8 mA —
Current Transfer Ratio (CTR) 50% to 600% at IF=5 mA, VCE=5 V —
Response Time (tr / tf) 4 us / 3 us typical —
Operating Temperature -40 C to +110 C —
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
UL Recognition UL 1577 recognized (File E90700) —
MSL Level 1 per IPC/JEDEC J-STD-020 —
Channel Count — 1
Output Type — Phototransistor
Number of Pins — 4
Emitter Material — Gallium Arsenide (GaAs) Infrared LED
Detector Type — Silicon Phototransistor
Operating Temperature Range — -40 C to +110 C
Forward Voltage (VF) Typical — 1.2 V at IF = 10 mA
Reverse Voltage (VR) Maximum — 6 V
Collector-Emitter Voltage (VCEO) Maximum — 80 V
Emitter-Base Voltage (VEBO) Maximum — 7 V
Collector Current (IC) Maximum — 50 mA

Datasheets & Resources

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