FODM217AR2 vs FODM217A 对比
详细并排对比 FODM217AR2 出自 onsemi 和 FODM217A 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | FODM217AR2 | FODM217A |
|---|---|---|
| 品牌 | onsemi | onsemi |
| 分类 | Optocouplers | Optocouplers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.21 | $0.31 |
| Part Number | FODM217AR2 | — |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Device Type | Single-Channel DC-Sensing Phototransistor Optocoupler | — |
| 输出配置 | Transistor (phototransistor, single channel) | — |
| Number of Channels | 1 | — |
| Input Type | DC sensing | DC Sensing |
| 封装 | 4-SOP / MFP-4 (half-pitch mini-flat, 1.27 mm pitch) | 4-SOP (Half-Pitch Mini-Flat) |
| Isolation Voltage (VISO) | 3750 Vrms (per UL 1577) | 3,750 VACrms |
| 集电极-发射极电压（Vceo） | 80 V maximum | — |
| 集电极电流（Ic） | 50 mA maximum | — |
| Forward Current (IF) | 50 mA maximum | — |
| Forward Voltage (VF) | 1.2 V typical at IF=10 mA | — |
| VCE(SAT) | 0.4 V maximum at IC=2.4 mA, IF=8 mA | — |
| Current Transfer Ratio (CTR) | 50% to 600% at IF=5 mA, VCE=5 V | — |
| Response Time (tr / tf) | 4 us / 3 us typical | — |
| 工作温度 | -40 C to +110 C | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| UL Recognition | UL 1577 recognized (File E90700) | — |
| MSL 等级 | 1 per IPC/JEDEC J-STD-020 | — |
| Channel Count | — | 1 |
| 输出类型 | — | Phototransistor |
| 引脚数 | — | 4 |
| Emitter Material | — | Gallium Arsenide (GaAs) Infrared LED |
| Detector Type | — | Silicon Phototransistor |
| 工作温度范围 | — | -40 C to +110 C |
| Forward Voltage (VF) Typical | — | 1.2 V at IF = 10 mA |
| Reverse Voltage (VR) Maximum | — | 6 V |
| Collector-Emitter Voltage (VCEO) Maximum | — | 80 V |
| Emitter-Base Voltage (VEBO) Maximum | — | 7 V |
| Collector Current (IC) Maximum | — | 50 mA |