H5AN4G6NBJR-PBC vs K4A4G165WD-BCRC Comparison
Detailed side-by-side comparison of H5AN4G6NBJR-PBC by SK hynix and K4A4G165WD-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN4G6NBJR-PBC | K4A4G165WD-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.60 | $5.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| Organization | 256M x 16 (268435456 words x 16 bits) | 256M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface | DDR4 (double data rate, synchronous) | — |
| Package Code | TFBGA | — |
| Package | FBGA-96 (PBGA96), rectangular | FBGA-96 |
| Number of Terminals | 96 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Features | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC | — |
| Operating Temperature | [DATA_NEEDED: temperature range for -C grade] | [DATA_NEEDED: operating temperature range] |
| Data Rate / Speed Grade | [DATA_NEEDED: speed grade PBC data rate] | — |
| CAS Latency | [DATA_NEEDED: CAS latency for PBC speed grade] | — |
| Process | CMOS | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) | — |
| Temperature Grade | OTHER (per distributor listing) | — |
| Density | — | 4 Gbit |
| Speed Bin | — | DDR4-2400 (BCRC) |
| Supply Voltage | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| Interface Type | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| RoHS Status | — | Lead free / RoHS Compliant |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |