H5AN4G6NBJR-PBC vs K4A4G165WD-BCRC 对比
详细并排对比 H5AN4G6NBJR-PBC 出自 SK hynix 和 K4A4G165WD-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G6NBJR-PBC | K4A4G165WD-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.60 | $5.10 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| 存储组织 | 256M x 16 (268435456 words x 16 bits) | 256M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| 接口 | DDR4 (double data rate, synchronous) | — |
| Package Code | TFBGA | — |
| 封装 | FBGA-96 (PBGA96), rectangular | FBGA-96 |
| Number of Terminals | 96 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 特性 | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC | — |
| 工作温度 | [DATA_NEEDED: temperature range for -C grade] | [DATA_NEEDED: operating temperature range] |
| Data Rate / Speed Grade | [DATA_NEEDED: speed grade PBC data rate] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency for PBC speed grade] | — |
| Process | CMOS | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) | — |
| Temperature Grade | OTHER (per distributor listing) | — |
| Density | — | 4 Gbit |
| Speed Bin | — | DDR4-2400 (BCRC) |
| 电源电压 | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| 接口类型 | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| RoHS 状态 | — | Lead free / RoHS Compliant |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |