H5AN8G6NAFR-UHC vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of H5AN8G6NAFR-UHC by SK hynix and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NAFR-UHC | H5AN8G6NDJR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.74 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 2400 MT/s | 3200 Mbps (DDR4-3200) |
| Package | FBGA-96 | 96-ball FBGA (13mm x 7.5mm) |
| Operating Temperature | 0°C to +85°C | — |
| Number of Terminals | 96 | 96 |
| Package Code | TFBGA | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 22 cycles (at 3200 Mbps) |
| Burst Length | 8, 4 (with burst chop) | 8 (BL8), 4 (BC4) |
| Refresh | Auto self-refresh | — |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |