H5AN8G6NDJR-UHC vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-UHC by SK hynix and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G6NDJR-UHC
H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix
H5AN8G6NDJR-UHC β ActiveSamsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR-UHC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $34.60 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) | β |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Supply Voltage (VDDQ) | 1.2 V | β |
| Number of Terminals | 96 | β |
| Package | FBGA-96 (13x7.5 mm) | 96-ball FBGA (9mm x 13mm) |
| Package Shape | RECTANGULAR | β |
| JESD-30 Code | R-PBGA-B96 | β |
| Maximum Operating Temperature | 85 Β°C | β |
| Minimum Operating Temperature | 0 Β°C | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | β |
| Data Rate | β | 2400 Mbps |
| VPP Voltage | β | 2.5 V |
| Operating Temperature | β | 0Β°C to +95Β°C (case) |
| Interface | β | 16-bit I/O |
| Banks | β | 16 (4 bank groups) |
| Burst Length | β | 8 (BL8) |
| CAS Latency | β | Programmable (e.g., 16, 17, 18) |
| Refresh | β | Temperature-compensated self-refresh (TCSR) |
| Mounting Type | β | Surface Mount |