H5AN8G6NDJR-UHC vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-UHC by SK hynix and K4A8G165WC-BCRC by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR-UHC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electro-Mechanics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $19.69 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Number of Terminals | 96 | — |
| Package | FBGA-96 (13x7.5 mm) | 96-FBGA (TFBGA) |
| Package Shape | RECTANGULAR | — |
| JESD-30 Code | R-PBGA-B96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Minimum Operating Temperature | 0 °C | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | — |
| Memory Size | — | 8 Gbit |
| Data Rate | — | 2400 Mbps |
| Clock Frequency | — | 1333 MHz |
| Supply Voltage | — | 1.2 V (1.14 V to 1.26 V) |
| Interface | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Operating Temperature | — | 0 C to +95 C |
| Mounting Type | — | Surface Mount |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |
| RoHS Status | — | Compliant |