H5AN8G8NCJR-VKI vs K4A8G085WC-BCTD Comparison
Detailed side-by-side comparison of H5AN8G8NCJR-VKI by SK hynix and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySpecification Comparison
| Parameter | H5AN8G8NCJR-VKI | K4A8G085WC-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Last Time Buy |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $50.85 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 1G x8 | — |
| Data Rate | 2666 Mbps | 2666 Mbps (PC4-2133) |
| Supply Voltage | 1.2 V | — |
| Interface | Parallel | — |
| Memory Format | DRAM | — |
| Volatile | Yes | — |
| Package | FBGA-78 | 78-ball FBGA (78FBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Grade | Industrial (I suffix) | — |
| Operating Temperature | [DATA_NEEDED: Operating Temperature] | 0C to +95C |
| Technology | CMOS | — |
| Product Family | H5AN8G8NCJR-xxC/xI DDR4 SDRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| RoHS Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| Organization | — | 1G x 8 |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Interface Type | — | Synchronous, parallel |