H5AN8G8NCJR-VKI vs K4A8G085WC-BCTD 对比
详细并排对比 H5AN8G8NCJR-VKI 出自 SK hynix 和 K4A8G085WC-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最后一次采购规格对比
| 参数 | H5AN8G8NCJR-VKI | K4A8G085WC-BCTD |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 最后采购期 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.85 | $50.85 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb | — |
| Memory Organization | 1G x8 | — |
| 数据速率 | 2666 Mbps | 2666 Mbps (PC4-2133) |
| 电源电压 | 1.2 V | — |
| 接口 | Parallel | — |
| Memory Format | DRAM | — |
| Volatile | Yes | — |
| 封装 | FBGA-78 | 78-ball FBGA (78FBGA) |
| 安装类型 | Surface Mount | Surface Mount |
| Grade | Industrial (I suffix) | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature] | 0C to +95C |
| Technology | CMOS | — |
| Product Family | H5AN8G8NCJR-xxC/xI DDR4 SDRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| 存储组织 | — | 1G x 8 |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| 接口类型 | — | Synchronous, parallel |