H5ANAG8NCMR-XNI vs MT40A2G8AG-062E Comparison

Detailed side-by-side comparison of H5ANAG8NCMR-XNI by SK hynix and MT40A2G8AG-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG8NCMR-XNI H5ANAG8NCMR-XNI - 16Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5ANAG8NCMR-XNI - 16Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5ANAG8NCMR-XNI ✓ Active
Micron Technology
MT40A2G8AG-062E MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E ✓ Active

Specification Comparison

Parameter H5ANAG8NCMR-XNI MT40A2G8AG-062E
Brand SK hynix Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.15 $9.75
Memory Type Volatile (DRAM) DDR4 SDRAM
Memory Format DDR4 SDRAM —
Memory Size 16 Gb —
Memory Organization x8 —
Interface Parallel —
Data Rate 3200 Mbps (DDR4-3200) —
Supply Voltage (VDD) 1.2 V —
Package FBGA-78 78-FBGA (7.5 x 11 mm)
Mounting Type Surface Mount Surface Mount
Packaging Tray —
Product Status Active —
Manufacturer SK Hynix —
Technology CMOS DDR4 SDRAM —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Operating Temperature [DATA_NEEDED: operating temperature range] —
Refresh [DATA_NEEDED: refresh rate] —
Density — 16 Gbit
Organization — 2G x 8
Speed — DDR4-3200 (3200 MT/s)
Clock Frequency — 1600 MHz
Access Time (Clock Cycle Time) — 0.625 ns (tCK)
CAS Latency — CL22 (DDR4-3200)
Access Time — 19 ns
Supply Voltage VDD — 1.2 V
I/O Interface — POD12 (1.2 V pseudo-open drain)
VPP Voltage — 2.5 V
Number of Banks — 16 (4 bank groups x 4 banks)
Operating Temperature (AUT grade) — -40C to +95C (per Micron grade table)
Die Revision — AG (current generation)

Datasheets & Resources

Browse All Products Create BOM Request Quote