H5CG48AGBDX018N vs K4RAH086VB-BIQK Comparison

Detailed side-by-side comparison of H5CG48AGBDX018N by SK hynix and K4RAH086VB-BIQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5CG48AGBDX018N H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N ✓ Active
Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ Active

Specification Comparison

Parameter H5CG48AGBDX018N K4RAH086VB-BIQK
Brand SK hynix Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $87.42 $4.25
Memory Type DDR5 SDRAM DDR5 SDRAM
Density 16 Gb (2G x 8) 16 Gb
Organization 2G x 8 2G x 8
Data Rate 5600 Mbps 4800 Mbps/pin
Supply Voltage 1.1 V —
Bus Width 8 bit —
Package 82-ball FCBGA (JEDEC DDR5 78/82-ball) 82FBGA
Mounting Type Surface Mount —
Operating Temperature -40C to +85C [DATA_NEEDED: operating temperature range]
Interface JEDEC DDR5 DDR5 (CA reduced pin count)
Memory Generation DDR5 (SK hynix A-die) —
Clock Frequency up to 5600 MHz (data rate 5600 Mbps) —
Application Class Computing, industrial controllers, embedded logging —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA)
MSL Level [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Core Supply Voltage — 1.1 V (nominal)
Configuration — X8
Speed Grade — BIQK (-BIQK bin)
ECC — On-die ECC (DDR5 standard)
Burst Length — 16 / 32
Operating Mode — DLL enabled
CAS Latency — [DATA_NEEDED: CAS latency (CL)]
Refresh — [DATA_NEEDED: refresh rate specification]

Datasheets & Resources

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