H5CG48AGBDX018N vs K4RAH086VB-BIQK 对比

详细并排对比 H5CG48AGBDX018N 出自 SK hynix 和 K4RAH086VB-BIQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5CG48AGBDX018N H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N - DDR5 16Gb 5600Mbps DRAM | SK hynix

H5CG48AGBDX018N ✓ 量产中
Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ 量产中

规格对比

参数 H5CG48AGBDX018N K4RAH086VB-BIQK
品牌 SK hynix Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $87.42 $4.25
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 16 Gb (2G x 8) 16 Gb
存储组织 2G x 8 2G x 8
数据速率 5600 Mbps 4800 Mbps/pin
电源电压 1.1 V —
Bus Width 8 bit —
封装 82-ball FCBGA (JEDEC DDR5 78/82-ball) 82FBGA
安装类型 Surface Mount —
工作温度 -40C to +85C [DATA_NEEDED: operating temperature range]
接口 JEDEC DDR5 DDR5 (CA reduced pin count)
Memory Generation DDR5 (SK hynix A-die) —
Clock Frequency up to 5600 MHz (data rate 5600 Mbps) —
Application Class Computing, industrial controllers, embedded logging —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA)
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Core Supply Voltage — 1.1 V (nominal)
Configuration — X8
Speed Grade — BIQK (-BIQK bin)
ECC — On-die ECC (DDR5 standard)
Burst Length — 16 / 32
Operating Mode — DLL enabled
CAS 延迟 — [DATA_NEEDED: CAS latency (CL)]
Refresh — [DATA_NEEDED: refresh rate specification]

数据手册与资源

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