H5TC4G63AFR-PBA vs K4A8G165WB-BIRC Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBA by SK hynix and K4A8G165WB-BIRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
K4A8G165WB-BIRC ✓ ActiveSpecification Comparison
| Parameter | H5TC4G63AFR-PBA | K4A8G165WB-BIRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.98 | $39.50 |
| Memory Type | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4Gb | 8 Gbit |
| Organization | 256M x 16 | 512M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Data Rate | 1866 Mbps (PC3L-14900) | 2400 Mbps |
| Package | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | 8, 16 |
| CAS Latency (CL) | 11, 12, 13 | — |
| Operating Temperature Range | 0°C to +95°C (Tcase) | -40°C to +95°C |
| Interface | 16-bit I/O | 16-bit |
| On-Die Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Supply Voltage | — | 1.2 V |
| DLL Enabled Mode | — | Yes |
| Row Address | — | 16 bits |
| Column Address | — | 10 bits |
| Bank Count | — | 16 banks |
| RoHS Compliant | — | Yes |