H5TC4G63AFR-PBI vs IS43TR16256AL-125KBLI-TR Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBI disebabkan oleh SK hynix dan IS43TR16256AL-125KBLI-TR disebabkan oleh ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5TC4G63AFR-PBI H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ Aktif

Pengandingan Spesifikasi

Parametr H5TC4G63AFR-PBI IS43TR16256AL-125KBLI-TR
Merek SK hynix ISSI, Integrated Silicon Solution Inc
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Obsolete Aktif
Harga Unit (USD) — $8.25
Jenis Ingatan DDR3L SDRAM DDR3L SDRAM
Organisasi 256M x 16 —
Total Memory Size 4 Gb —
Kadar Data DDR3-1600 (PC3L-12800) 1600 Mbps
Tegangan Pemberi Arus 1.35 V —
Number of Banks 8 —
Burst Length 8 (BL8) 8
Latensi CAS Programmable 11
On-Die Termination (ODT) Yes Yes
Refresh Period 7.8 us at 85°C —
Gambaran Suhu Operasi -40°C to +95°C -40°C to +95°C (TC)
Kemasan 96-ball FBGA (TFBGA, BGA96, 9x16, 32) 96-TWBGA (9x13 mm)
Jenis Pemasangan Surface Mount Surface Mount
Number of Terminals 96 —
Status RoHS Compliant Compliant
Saiz Ingatan — 4Gbit (256M x 16)
Lebar Bus Data — 16 bit
Clock Frequency — 800 MHz
Supply Voltage (VDD/VDDQ) — 1.35V ± 0.1V, -0.067V
Backward Compatible Voltage — 1.5V
Row Cycle Time (tRC) — 20 ns
Row Active Time (tRAS) — 20 ns
Refresh Modes — Auto-refresh, Self-refresh

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