H5TC4G63AFR-PBJ vs K4B4G1646D-BCK00 比較
詳細並排比較 H5TC4G63AFR-PBJ 由 SK hynix 與 K4B4G1646D-BCK00 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5TC4G63AFR-PBJ | K4B4G1646D-BCK00 |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| 記憶體容量 | 4 Gb (256M x 16) | — |
| 供應電壓 | 1.35 V | 1.35V (1.283V to 1.45V) |
| 封裝 | 96-ball TFBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| 資料速率 | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1600 Mbps/pin |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | 11 (at 1600 Mbps) |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4 Gb |
| 組織 | — | 256M x 16 |
| Speed Grade | — | DDR3-1600 (800 MHz) |
| I/O Voltage | — | 1.35V |
| 工作溫度 | — | 0°C to 95°C (Tcase) |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |