H5TC4G63AFR-PBJ vs K4B4G1646D-BCK00 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBJ sa pamamagitan ng SK hynix at K4B4G1646D-BCK00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBJ | K4B4G1646D-BCK00 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gb (256M x 16) | — |
| Volte ng Pagbibigay | 1.35 V | 1.35V (1.283V to 1.45V) |
| Packhaging | 96-ball TFBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Rate ng Data | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1600 Mbps/pin |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | 11 (at 1600 Mbps) |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4 Gb |
| Organisasyon | — | 256M x 16 |
| Speed Grade | — | DDR3-1600 (800 MHz) |
| I/O Voltage | — | 1.35V |
| Temperature na Operasyon | — | 0°C to 95°C (Tcase) |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |