H5TC4G63CFR-H9I vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of H5TC4G63CFR-H9I by SK hynix and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63CFR-H9I
H5TC4G63CFR-H9I - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
H5TC4G63CFR-H9I β Active
Specification Comparison
| Parameter | H5TC4G63CFR-H9I | K4B4G1646E-BYMA |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.20 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| I/O Voltage | 1.35 V | β |
| Data Rate | 1866 Mbps (PC3-14900) | 1866 Mbps/pin |
| Package | 96-ball TFBGA | FBGA-96 |
| Temperature Grade | Industrial (-40Β°C to +95Β°C) | β |
| Number of Terminals | 96 | β |
| Memory Width | 16 bits | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| CAS Latency | Programmable (11, 12, 13) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 and 4 | [DATA_NEEDED: Burst Length] |
| On-Die Termination | Yes | β |
| Refresh Modes | Auto-refresh, Self-refresh | β |
| Clock Frequency | β | 933 MHz |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| RoHS | β | Compliant |
| Number of Pins | β | 96 |