H5TC4G63CFR-H9I vs K4B4G1646E-BYMA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63CFR-H9I disebabkan oleh SK hynix dan K4B4G1646E-BYMA disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63CFR-H9I | K4B4G1646E-BYMA |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14.32 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| I/O Voltage | 1.35 V | — |
| Kadar Data | 1866 Mbps (PC3-14900) | 1866 Mbps/pin |
| Kemasan | 96-ball TFBGA | FBGA-96 |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Number of Terminals | 96 | — |
| Memory Width | 16 bits | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Latensi CAS | Programmable (11, 12, 13) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 and 4 | [DATA_NEEDED: Burst Length] |
| On-Die Termination | Yes | — |
| Refresh Modes | Auto-refresh, Self-refresh | — |
| Clock Frequency | — | 933 MHz |
| Suhu Operasi | — | 0°C to +95°C |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Jenis Pemasangan | — | Surface Mount |
| RoHS | — | Compliant |
| Bilangan Pin | — | 96 |