H5TC4G63CFR-XXJ vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of H5TC4G63CFR-xxJ by SK hynix and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63CFR-xxJ
H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
H5TC4G63CFR-xxJ β Active
Specification Comparison
| Parameter | H5TC4G63CFR-xxJ | K4B4G1646E-BYMA |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V + 0.100 / - 0.067V | β |
| Clock Input | Fully differential (CK, CK#) | β |
| Data Strobe | Differential (DQS, DQS#) | β |
| On-Chip DLL | Yes | β |
| DM Mask | Yes | β |
| Package | 96-ball FBGA | FBGA-96 |
| Operating Temperature Range | 0Β°C to 95Β°C (case) | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Speed Grade | [DATA_NEEDED: speed grade for -xxJ suffix] | β |
| CAS Latency | [DATA_NEEDED: CAS latency options] | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 and 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| On-Die Termination | Yes | β |
| Refresh | Auto-refresh and self-refresh | β |
| Supply Voltage | β | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | β | 933 MHz |
| Data Rate | β | 1866 Mbps/pin |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| Number of Pins | β | 96 |