H9JCNNNBK3MLYR-N6E vs H9JCNNNBK3MLYR-N6E-SK Comparison

Detailed side-by-side comparison of H9JCNNNBK3MLYR-N6E by SK hynix and H9JCNNNBK3MLYR-N6E-SK by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H9JCNNNBK3MLYR-N6E H9JCNNNBK3MLYR-N6E - 16Gb LPDDR5-6400 SDRAM | SK Hynix

H9JCNNNBK3MLYR-N6E - 16Gb LPDDR5-6400 SDRAM | SK Hynix

H9JCNNNBK3MLYR-N6E ✓ Active

Specification Comparison

Parameter H9JCNNNBK3MLYR-N6E H9JCNNNBK3MLYR-N6E-SK
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $24.37 $20.85
Memory Type LPDDR5 SDRAM Volatile - DRAM (LPDDR5 SDRAM)
Density 16 Gb (2 GB) 16 Gb (2 GB)
Organization 512M x 32 512M x 32
Data Rate 6400 Mbps per pin 6400 Mbps (LPDDR5-6400)
Supply Voltage (VDD2) 1.05 V —
Supply Voltage (VDD1) [DATA_NEEDED: VDD1 rail voltage] —
Supply Voltage (VDDQ) [DATA_NEEDED: VDDQ rail voltage] —
Package TFBGA-315 315-ball TFBGA (12 x 12 mm)
Mounting Type Surface Mount Surface Mount
Number of Channels Dual channel (x16 + x16) —
Operating Temperature [DATA_NEEDED: operating temperature range] -55C to +125C
RoHS Status Compliant Compliant
Memory Technology DRAM (volatile) —
Refresh Mode [DATA_NEEDED: refresh mode support] —
On-Die Termination [DATA_NEEDED: ODT support] —
Bank Architecture [DATA_NEEDED: bank group configuration] —
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Bus Width — 16-bit
Channel Architecture — Dual-channel (per datasheet family)
VDD (Core Supply) — 1.05 V (range 1.01 V to 1.12 V)
VDDQ (I/O Supply) — 1.8 V (range 1.7 V to 1.95 V)
JEDEC Standard — JESD209-5 (LPDDR5)
On-die ECC — Yes (per LPDDR5 base spec)

Datasheets & Resources

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