IAUC100N04S6L020ATMA1 vs IAUCN04S7L006ATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6L020ATMA1 by Infineon and IAUCN04S7L006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 ✓ Active
Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Active

Specification Comparison

Parameter IAUC100N04S6L020ATMA1 IAUCN04S7L006ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Drain-Source Breakdown Voltage V(BR)DSS 40 V —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Tc) 75 W —
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΩ —
RDS(on) Typical 2.0 mΩ —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) Typical 2.0 V —
Technology OptiMOS 6 OptiMOS-7 trench
Operating Temperature Range -55 °C to +175 °C (TJ) -55 °C to +175 °C
Package PG-TDSON-8 (SS08, 5x6 mm leadless) PG-TDSON-8-43
Mounting Type Surface Mount Surface Mount
Qualification Automotive grade —
Packaging Tape & Reel (TMA1) Tape and Reel (ATMA1)
RoHS Status Compliant Compliant
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 175 A
R_DS(on) Max — 0.6 mΩ at V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical value]
Gate Charge (Q_g) — [DATA_NEEDED: total gate charge]
Automotive Qualified — Yes (AEC-Q101)
Pin Count — 8
Polarity — Single N-Channel

Datasheets & Resources

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