IAUC120N04S6N010ATMA1 vs IAUA120N04S5N014AUMA1 Comparison

Detailed side-by-side comparison of IAUC120N04S6N010ATMA1 by Infineon and IAUA120N04S5N014AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Active

Specification Comparison

Parameter IAUC120N04S6N010ATMA1 IAUA120N04S5N014AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $2.18
FET Type N-Channel N-Channel
Drain-Source Voltage (V(BR)DSS) 40 V
Continuous Drain Current (Id, Tc) 150 A
Power Dissipation (Pd, Tc) 150 W
RDS(on) at VGS=10V (typ) 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 µA)
Technology OptiMOS 6 MOSFET (Metal Oxide)
Package PG-TDSON-8-34 (5x6 mm leadless) PG-HSOF-5-2 (sTOLL)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
Operating Temperature Range -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet]
MSL Level 1 (per JEDEC J-STD-020, per Infineon TDSON family) [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec
Polarity Single N-channel
Manufacturer Infineon Technologies
Part Number IAUA120N04S5N014AUMA1
Series OptiMOS™ 5
Drain-to-Source Voltage (V<sub>DSS</sub>) 40 V
Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C 120 A
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V 1.4 mΩ
Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C 136 W
Pin Count 5 + Tab (6 effective)
Gate Drive Enhancement Mode
Avalanche Rated Yes (100% avalanche tested)

Datasheets & Resources

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