IAUC120N04S6N010ATMA1 vs IAUA120N04S5N014AUMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N04S6N010ATMA1 von Infineon und IAUA120N04S5N014AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktivInfineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N04S6N010ATMA1 | IAUA120N04S5N014AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $2,18 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 40 V | — |
| Continuous Drain Current (Id, Tc) | 150 A | — |
| Power Dissipation (Pd, Tc) | 150 W | — |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ | — |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ | — |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) | — |
| Technology | OptiMOS 6 | MOSFET (Metal Oxide) |
| Gehäuse | PG-TDSON-8-34 (5x6 mm leadless) | PG-HSOF-5-2 (sTOLL) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] |
| MSL-Level | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | — |
| Polarity | Single N-channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUA120N04S5N014AUMA1 |
| Series | — | OptiMOS™ 5 |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | — | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | — | 1.4 mΩ |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | — | 136 W |
| Pin-Anzahl | — | 5 + Tab (6 effective) |
| Gate Drive | — | Enhancement Mode |
| Avalanche Rated | — | Yes (100% avalanche tested) |