IAUC120N04S6N010ATMA1 vs IAUA120N04S5N014AUMA1 Comparación
Comparación detallada lado a lado de IAUC120N04S6N010ATMA1 por Infineon y IAUA120N04S5N014AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ ActivoInfineon
IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon
IAUA120N04S5N014AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N04S6N010ATMA1 | IAUA120N04S5N014AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,68 | $2,18 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 40 V | — |
| Continuous Drain Current (Id, Tc) | 150 A | — |
| Power Dissipation (Pd, Tc) | 150 W | — |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ | — |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ | — |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) | — |
| Technology | OptiMOS 6 | MOSFET (Metal Oxide) |
| Encapsulado | PG-TDSON-8-34 (5x6 mm leadless) | PG-HSOF-5-2 (sTOLL) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) | -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] |
| Nivel MSL | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | — |
| Polarity | Single N-channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUA120N04S5N014AUMA1 |
| Series | — | OptiMOS™ 5 |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C | — | 120 A |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V | — | 1.4 mΩ |
| Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C | — | 136 W |
| Recuento de pines | — | 5 + Tab (6 effective) |
| Gate Drive | — | Enhancement Mode |
| Avalanche Rated | — | Yes (100% avalanche tested) |