IAUC120N04S6N010ATMA1 vs IAUA120N04S5N014AUMA1 对比

详细并排对比 IAUC120N04S6N010ATMA1 出自 Infineon 和 IAUA120N04S5N014AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ 量产中
Infineon
IAUA120N04S5N014AUMA1 IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 ✓ 量产中

规格对比

参数 IAUC120N04S6N010ATMA1 IAUA120N04S5N014AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $2.18
FET Type N-Channel N-Channel
Drain-Source Voltage (V(BR)DSS) 40 V —
Continuous Drain Current (Id, Tc) 150 A —
Power Dissipation (Pd, Tc) 150 W —
RDS(on) at VGS=10V (typ) 1.0 mΩ —
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΩ —
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 µA) —
Technology OptiMOS 6 MOSFET (Metal Oxide)
封装 PG-TDSON-8-34 (5x6 mm leadless) PG-HSOF-5-2 (sTOLL)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
工作温度范围 -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet]
MSL 等级 1 (per JEDEC J-STD-020, per Infineon TDSON family) [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec —
Polarity Single N-channel —
Manufacturer — Infineon Technologies
Part Number — IAUA120N04S5N014AUMA1
Series — OptiMOS™ 5
Drain-to-Source Voltage (V<sub>DSS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C — 120 A
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V — 1.4 mΩ
Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C — 136 W
引脚数量 — 5 + Tab (6 effective)
Gate Drive — Enhancement Mode
Avalanche Rated — Yes (100% avalanche tested)

数据手册与资源

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