IAUC120N06S5N017ATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N017ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N017ATMA1
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUC120N06S5N017ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | Automotive OptiMOS 7 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A | — |
| Pulsed Drain Current (IDM) | 757 A | — |
| RDS(on) at VGS=10V | 1.7 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | — |
| Input Capacitance (Ciss) | 6.952 nF | — |
| Reverse Transfer Capacitance (Crss) | 84 pF | — |
| Output Capacitance (Coss) | 1.507 nF | — |
| Power Dissipation (PD, Tc=25°C) | 167 W | — |
| Operating Temperature Range | -55°C to +175°C | -55°C to +175°C (TJ) |
| Package | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes (Automotive Grade) | — |
| MSL Level | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020, typical for this package) |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Transistor Type | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| RoHS Status | — | Compliant |