IAUC120N06S5N017ATMA1 vs IAUCN08S7L033ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC120N06S5N017ATMA1 von Infineon und IAUCN08S7L033ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC120N06S5N017ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,32 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | Automotive OptiMOS 7 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A | — |
| Pulsed Drain Current (IDM) | 757 A | — |
| RDS(on) at VGS=10V | 1.7 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | — |
| Input Capacitance (Ciss) | 6.952 nF | — |
| Reverse Transfer Capacitance (Crss) | 84 pF | — |
| Output Capacitance (Coss) | 1.507 nF | — |
| Power Dissipation (PD, Tc=25°C) | 167 W | — |
| Betriebstemperaturbereich | -55°C to +175°C | -55°C to +175°C (TJ) |
| Gehäuse | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Montageart | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes (Automotive Grade) | — |
| MSL-Level | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020, typical for this package) |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Transistortyp | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| RoHS-Status | — | Compliant |