IAUC120N06S5N017ATMA1 vs IAUCN08S7L033ATMA1 对比
详细并排对比 IAUC120N06S5N017ATMA1 出自 Infineon 和 IAUCN08S7L033ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ 量产中规格对比
| 参数 | IAUC120N06S5N017ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.32 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | Automotive OptiMOS 7 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A | — |
| Pulsed Drain Current (IDM) | 757 A | — |
| RDS(on) at VGS=10V | 1.7 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | — |
| Input Capacitance (Ciss) | 6.952 nF | — |
| Reverse Transfer Capacitance (Crss) | 84 pF | — |
| Output Capacitance (Coss) | 1.507 nF | — |
| Power Dissipation (PD, Tc=25°C) | 167 W | — |
| 工作温度范围 | -55°C to +175°C | -55°C to +175°C (TJ) |
| 封装 | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 安装类型 | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes (Automotive Grade) | — |
| MSL 等级 | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020, typical for this package) |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| RoHS 状态 | — | Compliant |