IAUC120N06S5N017ATMA1 vs IAUCN08S7L033ATMA1 Сравнение
Подробное сравнение бок о бок IAUC120N06S5N017ATMA1 от Infineon и IAUCN08S7L033ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC120N06S5N017ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,32 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | Automotive OptiMOS 7 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A | — |
| Pulsed Drain Current (IDM) | 757 A | — |
| RDS(on) at VGS=10V | 1.7 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | — |
| Input Capacitance (Ciss) | 6.952 nF | — |
| Reverse Transfer Capacitance (Crss) | 84 pF | — |
| Output Capacitance (Coss) | 1.507 nF | — |
| Power Dissipation (PD, Tc=25°C) | 167 W | — |
| Диапазон рабочих температур | -55°C to +175°C | -55°C to +175°C (TJ) |
| Корпус | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Тип монтажа | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes (Automotive Grade) | — |
| Уровень MSL | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020, typical for this package) |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Тип транзистора | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| Статус RoHS | — | Compliant |