IAUC120N06S5N017ATMA1 vs IAUCN08S7L033ATMA1 비교

다음의 상세 나란히 비교: IAUC120N06S5N017ATMA1 제조: Infineon 및 IAUCN08S7L033ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 활성

사양 비교

파라미터 IAUC120N06S5N017ATMA1 IAUCN08S7L033ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.32 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 Automotive OptiMOS 7
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID, Tc=25°C) 120 A —
Pulsed Drain Current (IDM) 757 A —
RDS(on) at VGS=10V 1.7 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 3.4 V (typ) —
Total Gate Charge (Qg) at VGS=10V 95.9 nC —
Input Capacitance (Ciss) 6.952 nF —
Reverse Transfer Capacitance (Crss) 84 pF —
Output Capacitance (Coss) 1.507 nF —
Power Dissipation (PD, Tc=25°C) 167 W —
동작 온도 범위 -55°C to +175°C -55°C to +175°C (TJ)
패키지 PG-TDSON-8-43 (TDSON-8 EP) PG-TDSON-8-34 (SSO8, 5x6 mm²)
실장 유형 Surface Mount Surface Mount
AEC-Q101 Qualification Yes (Automotive Grade) —
MSL 레벨 MSL1 (260°C peak reflow) 1 (per JEDEC J-STD-020, typical for this package)
RoHS Compliance Green Product (RoHS compliant) —
트랜지스터 유형 — N-Channel MOSFET
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
Technology — OptiMOS 7 trench MOSFET
RoHS 상태 — Compliant

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