IAUC41N06S5N102ATMA1 vs IAUCN08S7L033ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC41N06S5N102ATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC41N06S5N102ATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Power-Transistor —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Paket PG-TDSON-8-33 (SSO8) Surface Mount PG-TDSON-8-34 (SSO8, 5x6 mm²)
Rentang Suhu Kerja -55C to +175C (junction) -55°C to +175°C (TJ)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) —
Status RoHS Compliant Compliant
Channel Polarity N-Channel (single) —
Series — Automotive OptiMOS 7
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
Technology — OptiMOS 7 trench MOSFET
Level MSL — 1 (per JEDEC J-STD-020, typical for this package)

Spek dan Sumber

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