IAUC41N06S5N102ATMA1 vs IAUCN08S7L033ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC41N06S5N102ATMA1 sa pamamagitan ng Infineon at IAUCN08S7L033ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ NakahandaInfineon
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC41N06S5N102ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | — |
| Power Dissipation (PD, Tc=25C) | 42 W | — |
| On-Resistance (RDS(on)) | 10.2 mΩ at VGS=10 V, ID=20 A | — |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | — |
| Total Gate Charge (QG) | 12.5 nC | — |
| Packhaging | PG-TDSON-8-33 (SSO8) Surface Mount | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55°C to +175°C (TJ) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | — |
| Tindminan RoHS | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | — |
| Series | — | Automotive OptiMOS 7 |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| Level ng MSL | — | 1 (per JEDEC J-STD-020, typical for this package) |