IAUCN04S6N009TATMA1 vs ISC011N03L5SATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S6N009TATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S6N009TATMA1

IAUCN04S6N009TATMA1 - 40V 0.9mΞ© OptiMOS 6 Auto MOSFET | Infineon

IAUCN04S6N009TATMA1 βœ“ Active
Infineon
ISC011N03L5SATMA1

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S6N009TATMA1 ISC011N03L5SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.71 $0.47
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40 V β€”
Part Number IAUCN04S6N009T β€”
Ordering Code (MPN) IAUCN04S6N009TATMA1 β€”
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID, at Tj) 330 A β€”
Power Dissipation (PD, at Tc) 178 W β€”
On-Resistance RDS(on) max 0.9 mΞ© β€”
Package PG-LHDSO-10-2 (SSO10T) PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 6 trench MOSFET OptiMOS 5 trench MOSFET
Automotive Qualification AEC-Q101 β€”
Lead-Free / RoHS Yes / Compliant β€”
Gate Threshold VGS(th) typ [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] β€”
Series β€” OptiMOS 5 / StrongIRFET 30 V
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) @ Ta=25C β€” 37 A
Continuous Drain Current (ID) @ Tc=25C β€” 100 A
Power Dissipation (PD) @ Ta=25C β€” 2.5 W
Power Dissipation (PD) @ Tc=25C β€” 96 W
Operating Temperature β€” -55 C to +175 C (TJ)
Gate Drive β€” Logic-level compatible
RoHS Status β€” Compliant
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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