IAUCN04S6N009TATMA1 vs ISC011N03L5SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S6N009TATMA1 disebabkan oleh Infineon dan ISC011N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN04S6N009TATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 40 V | — |
| Part Number | IAUCN04S6N009T | — |
| Ordering Code (MPN) | IAUCN04S6N009TATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID, at Tj) | 330 A | — |
| Power Dissipation (PD, at Tc) | 178 W | — |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Kemasan | PG-LHDSO-10-2 (SSO10T) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 trench MOSFET |
| Automotive Qualification | AEC-Q101 | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Suhu Operasi | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |
| Status RoHS | — | Compliant |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |