IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
MPN: IAUCN04S7L005ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.37 | $1.37 |
| 10 | $1.25 | $12.50 |
| 100 | $1.1 | $110.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.85 | $850.00 |
IAUCN04S7L005ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electrical signals in power-conversion circuits. The OptiMOS™ 7 family represents Infineon's seventh-generation 40 V to 300 V trench MOSFET platform, positioned within the broader taxonomy: trench MOSFET → power MOSFET → discrete semiconductor → power management component. Compared to planar MOSFETs, trench structures provide lower on-resistance per unit silicon area, which translates directly into lower conduction losses and higher power density.
Key features of the IAUCN04S7L005 include best-in-class figure-of-merit R<sub>DS(on)</sub> × Q<sub>g</sub>, avalanche ruggedness, a logic-level compatible gate threshold, and an integrated source-connected lead frame that improves thermal performance. The PG-TDSON-8-43 (TDSON-8) package exposes the drain tab on the bottom for low-thermal-resistance PCB mounting, and its 8-pin configuration supports high-current applications where standard SO-8 footprints cannot deliver the required current density. The package is lead-free and RoHS compliant.
The device is qualified for automotive AEC-Q101 standards and is targeted at 12 V/24 V automotive systems. OptiMOS 7 technology shrinks die area by roughly 30% versus the previous generation at the same R<sub>DS(on)</sub>, allowing the IAUCN04S7L005 to deliver 430 A continuous current in the compact TDSON-8 footprint. The combination of low Q<sub>g</sub> and low Q<sub>rr</sub> reduces switching losses and EMI, which is critical in high-frequency BLDC motor drives and synchronous rectification stages.
Typical applications include automotive BLDC motor drives (EPS, water/oil pumps, fans), high-current DC/DC converters, solenoid drivers, LED lighting front-stages, and battery management protection in 12 V/24 V systems. The 0.52 mΩ R<sub>DS(on)</sub> minimizes conduction loss across the entire load range, improving system efficiency and reducing thermal stress on the PCB.
When designing with this MOSFET, observe the SOA curve for high-current pulse conditions and ensure the gate driver can deliver sufficient peak current to charge Q<sub>g</sub> within the intended switching interval. A 10 Ω gate resistor is recommended to dampen ringing. Always check the maximum junction temperature of 175°C against the worst-case thermal envelope, and use a multi-via thermal pad pattern beneath the exposed drain pad to minimize R<sub>θJA</sub>.
This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes not found in the manufacturer datasheet, helping engineers evaluate the IAUCN04S7L005ATMA1 for new designs and as a drop-in replacement for end-of-life OptiMOS 5/6 parts.
Drop-in alternatives for IAUCN04S7L005ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN04S7L005ATMA1 (same form factor and footprint) — differing in Package, Automotive Qualification, Technology, Mounting Type, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN04S7N037GATMA1
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View Datasheet →IAUCN04S7L042GATMA1
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View Datasheet →IAUCN04S7L050HATMA1
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View Datasheet →IAUCN04S7L005ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 7 (trench N-channel MOSFET) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, T_C=25°C) | 430 A (Tj) |
| On-Resistance R_DS(on) max | 0.52 mΩ |
| Power Dissipation (P_D) | 179 W (T_C) |
| Operating Temperature Range | -55°C to +175°C (Tj) |
| Package | PG-TDSON-8-43 (TDSON-8) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IAUCN04S7L005ATMA1 Pin Configuration
| Pin 1 | Source — Source (paralleled) |
| Pin 2 | Source — Source (paralleled) |
| Pin 3 | Source — Source (paralleled) |
| Pin 4 | Source — Source (paralleled) |
| Pin 5 | Source — Source (paralleled) |
| Pin 6 | Source — Source (paralleled) |
| Pin 7 | Source — Source (paralleled) |
| Pin 8 | Gate — Gate drive input |
Typical Applications
IAUCN04S7L005ATMA1 is suitable for 6 applications: Automotive BLDC Motor Drive (EPS, Pumps, Fans), High-Current Synchronous DC/DC Converter (Buck/Boost), Automotive Solenoid and Relay Driver, Battery Management Protection (BMS Disconnect/Charge Path), High-Power LED Headlight Driver Front-End, Industrial High-Current Switching (Robotics, Automation).
Automotive BLDC Motor Drive (EPS, Pumps, Fans)
The IAUCN04S7L005ATMA1 is engineered for 12 V/24 V automotive BLDC motor drives such as electric power steering (EPS), water pumps, oil pumps, and cooling fans. Its 0.52 mΩ R_DS(on) at 40 V V_DS minimizes conduction loss during the high-current phase commutation typical of 3-phase inverter stages; a 100 A peak phase current dissipates only ~5.2 W in each MOSFET leg. The PG-TDSON-8-43 footprint supports >300 A continuous inverter operation while keeping the PCB compact enough for in-motor integration, and the AEC-Q101 qualification validates reliability under hood-temperature thermal cycling from -40 °C to +150 °C. Compared to discrete IGBTs, this OptiMOS 7 device cuts switching losses 5-10× at 20-50 kHz PWM, allowing higher PWM frequencies that reduce audible motor noise.
Recommended
High-Current Synchronous DC/DC Converter (Buck/Boost)
In 12 V/24 V-to-1 V/3.3 V/5 V high-current DC/DC converter stages, the IAUCN04S7L005ATMA1 serves as the synchronous rectifier (low-side FET) where its 0.52 mΩ R_DS(on) reduces rectification loss and improves converter efficiency at heavy load. At 100 A output current the synchronous FET dissipates I² × R = 5.2 W, well within the 179 W package rating with proper PCB copper. The OptiMOS 7 trench structure delivers low Q_rr, eliminating the reverse-recovery loss that plagues older planar MOSFETs at >100 kHz switching. The TDSON-8-43 package allows direct top-side cooling and is compatible with Infineon's gate-driver ICs for half-bridge configurations. AEC-Q101 qualification allows use in converter modules for xEV traction auxiliaries.
Recommended
Automotive Solenoid and Relay Driver
The IAUCN04S7L005ATMA1 is well-suited for driving automotive solenoids, valves, and electromechanical relays that require high peak currents (>100 A) with low on-state voltage drop. Its 0.52 mΩ R_DS(on) ensures the solenoid receives near-full battery voltage, maximizing actuation force and minimizing coil heat. The 430 A pulsed drain current rating provides substantial margin for inrush currents, while the PG-TDSON-8-43 footprint handles the resulting thermal load. AEC-Q101 reliability is essential for chassis and powertrain solenoids where failure modes must be predictable. The device is also suitable for solid-state relay (SSR) replacements in body-control modules where electromechanical relay life is a concern.
Recommended
Battery Management Protection (BMS Disconnect/Charge Path)
In 12 V/24 V battery management systems (BMS), the IAUCN04S7L005ATMA1 acts as the main charge/discharge disconnect switch or in-line reverse-battery protection FET. Its 40 V V_DS rating handles 24 V battery transients, and the 0.52 mΩ R_DS(on) keeps continuous discharge-path loss under 0.5% of battery energy even at 100 A. The OptiMOS 7 process provides low leakage at high temperature, which is critical for long-term parked-vehicle quiescent current budgets. AEC-Q101 qualification ensures long-term reliability across the 10-15 year automotive service life. The PG-TDSON-8-43 package allows integration into compact BMS modules near the battery terminal.
Recommended
High-Power LED Headlight Driver Front-End
The IAUCN04S7L005ATMA1 serves as the input-side hot-swap/PFET in automotive LED headlight driver front-ends where the load can exceed 50 W per lamp. Its 0.52 mΩ R_DS(on) minimizes voltage drop on the 12 V battery rail, ensuring the LED driver receives the full supply voltage and delivers rated lumens. The device handles the inrush current of large electrolytic input capacitors without SOA violations, and AEC-Q101 qualification ensures reliability under the wide thermal range of an under-hood environment. The PG-TDSON-8-43 footprint is small enough for integration into the headlight housing, eliminating separate driver boxes and reducing wiring harness complexity.
Recommended
Industrial High-Current Switching (Robotics, Automation)
Outside the automotive segment, the IAUCN04S7L005ATMA1 is used in industrial robotics and factory-automation power stages where 40 V/100 A switching is required. Industrial PLC motor drives, servo amplifiers, and welding-control inverters benefit from the 0.52 mΩ R_DS(on) and 179 W power dissipation. The Infineon OptiMOS 7 platform's low Q_g allows faster switching at 50-100 kHz, reducing transformer/filter sizes in isolated DC/DC stages. The PG-TDSON-8-43 footprint enables high-density PCB layouts where multiple parallel FETs can be placed for >500 A switching stages. Although not formally AEC-Q101 required for industrial use, the automotive-grade reliability provides extra margin for 24/7 factory operation.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7L005ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N037GATMA1 | IAUCN04S7N027GATMA1 | IAUCN04S7N019GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-43 | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same |
| V_DS max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R_DS(on) max | 0.52 mΩ | 0.37 mΩ (-29%) | 0.27 mΩ (-48%) | 0.19 mΩ (-63%) | 0.42 mΩ (-19%) | 0.50 mΩ (-4%) |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- OptiMOS 7 technology delivers best-in-class R_DS(on) × Q_g figure-of-merit (vs IAUC60N04S6L030HATMA1)
- Higher current capability in the same TDSON-8 footprint (vs IPD50N04S408ATMA1)
- AEC-Q101 automotive-grade reliability with Infineon quality (vs Industrial-only 40 V TDSON-8 MOSFETs)
Design Notes
Estimated: at 100 A continuous load with R_DS(on) = 0.52 mΩ, conduction loss is I² × R = 100² × 0.00052 = 5.2 W. The PG-TDSON-8-43 package achieves a junction-to-ambient thermal resistance in the 40-50 °C/W range on a 1 oz copper pour with thermal vias. At 100 A this corresponds to a 210-260 °C junction temperature rise above ambient, exceeding the 175 °C Tj maximum; PCB copper area must be enlarged or top-side cooling implemented. Always consult the manufacturer datasheet SOA curves before operating at the absolute maximum ratings.
Layout the exposed drain pad (pin 9, bottom of package) on a multi-via thermal pad array - typically 8-12 vias in a 0.3 mm pitch grid connecting top, inner, and bottom copper layers. Use 1 oz copper on each layer and flood both top and bottom sides to spread heat. Keep the source-trace loop area minimal to reduce parasitic inductance; gate-trace width ≥ 0.5 mm. Place gate driver within 5 mm of the gate pin and add a 10 Ω gate-source resistor close to the IC to dampen ringing.
Do not exceed the 40 V V_DS rating - 24 V automotive systems can produce load-dump transients up to 35 V and jump-start spikes to 36 V, leaving only a few V of margin. Verify that V_GS never exceeds ±20 V; use a gate-driver IC with regulated gate supply rather than driving directly from logic levels. Avoid continuous operation at the absolute maximum current rating; the 430 A figure is T_C=25 °C only and derates sharply with temperature.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q101 (automotive discrete semiconductor standard, equivalent to AEC-Q100 for discretes) qualified for automotive applications. Lead-free reflow-compatible. Halogen-free status not explicitly stated in available data.
